Comment on “Dispersion of birefringence in AgGaS2 and CuGaS2” [J. Appl. Phys. 82, 3100 (1997)]
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چکیده
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Comment on “ Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity ” [ J . Appl . Phys . 89 , 332 ( 2001 ) ]
In a recent article [J. Appl. Phys. 89, 332 (2001)], Karazhanov proposed a single-level recombination model as an explanation for the anomalous dependence of the carrier lifetime on injection-level observed in cast multicrystalline silicon. This approach contrasts with previous models which involved the use of two distinct levels, one causing recombination and the other only trapping. The purpo...
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The article of Fourn et al. [ J. Appl. Phys. 102, 124107 (2007) ] uses the numerical finite-element method to study the dielectric relaxation of a square array of coated cylinders. The comment here shows that similar results can be calculated immediately from the appropriate analytical expression. Our results are also compared to some figures in the article of Fourn et al. [ J. Appl. Phys. 102,...
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Comment on "Dynamic ion association in aqueous solutions of sulfate" [J. Chem. Phys. 123, 034508 (2005)].
The "dynamic exchange" model of ion association proposed by Watanabe and Hamaguchi, [J. Chem. Phys.123, 034508 (2005)] for aqueous solutions of MgSO4 is shown to be inconsistent with the extensive information available from Raman, relaxation, and thermodynamic studies, all of which can be explained by the Eigen equilibrium model.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1998
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.368348